Modelica.Electrical.Spice3.Internal

Collection of functions and records derived from the C++ Spice library

Information

This package contains all function, parameters and data of semiconductor models, that are transformed from SPICE3 into Modelica. The models of the package semiconductors access to repository models. This package should not be used via direct access by a user of the Spice-Library for Modelica. It is restricted to the development.

Extends from Modelica.Icons.Package (Icon for standard packages).

Package Content

Name Description

MOS Metal-Oxide Semiconductor Field-Effect Transistor

ModelcardMOS Record with technological parameters (.model)

MOS2 Metal-Oxide Semiconductor Field-Effect Transistor

ModelcardMOS2 Record with technological parameters (.model)

BJT Bipolar junction transistor

ModelcardBJT Record with technological parameters (.model)

DIODE Diode model

ModelcardDIODE Record with technological parameters (.model)

R_SEMI Semiconductor resistor

ModelcardR Record with technological parameters (.model)

SpiceConstants General constants of SPICE simulator

Functions Equations for semiconductor calculation

SpiceRoot Basic records and functions

Model Device Temperature

Mosfet Functions and records for Mosfets

Mos Records and functions for Mosfets level 1,2,3,6

Mos1 Records and functions for Mosfets level 1

Mos2 Records and functions for Mosfets level 2

Diode Records and functions for diode model

Rsemiconductor Records and functions for semiconductor resistor model

Bjt3 Records and functions for bjt model

Name	Description
MOS	Metal-Oxide Semiconductor Field-Effect Transistor
ModelcardMOS	Record with technological parameters (.model)
MOS2	Metal-Oxide Semiconductor Field-Effect Transistor
ModelcardMOS2	Record with technological parameters (.model)
BJT	Bipolar junction transistor
ModelcardBJT	Record with technological parameters (.model)
DIODE	Diode model
ModelcardDIODE	Record with technological parameters (.model)
R_SEMI	Semiconductor resistor
ModelcardR	Record with technological parameters (.model)
SpiceConstants	General constants of SPICE simulator
Functions	Equations for semiconductor calculation
SpiceRoot	Basic records and functions
Model	Device Temperature
Mosfet	Functions and records for Mosfets
Mos	Records and functions for Mosfets level 1,2,3,6
Mos1	Records and functions for Mosfets level 1
Mos2	Records and functions for Mosfets level 2
Diode	Records and functions for diode model
Rsemiconductor	Records and functions for semiconductor resistor model
Bjt3	Records and functions for bjt model

Modelica.Electrical.Spice3.Internal.MOS

Metal-Oxide Semiconductor Field-Effect Transistor

Modelica.Electrical.Spice3.Internal.MOS

Information

MOSFET model, both N and P channel, LEVEL 1: Shichman-Hodges

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Parameters

Type Name Default Description

Integer mtype MOSFET type: 0 - N channel, 1 - P channel

Length L 1e-4 Length [m]

Length W 1e-4 Width [m]

Area AD 0 Area of the drain diffusion [m2]

Area AS 0 Area of the source diffusion [m2]

Length PD 0 Perimeter of the drain junction [m]

Length PS 0 Perimeter of the source junction [m]

Real NRD 1 Number of squares of the drain diffusions

Real NRS 1 Number of squares of the source diffusions

Integer OFF 0 Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet

Voltage IC Initial condition values, not implemented yet [V]

Temp_C TEMP 27 Operating temperature of the device [degC]

ModelcardMOS modelcard MOSFET modelcard

Type	Name	Default	Description
Integer	mtype		MOSFET type: 0 - N channel, 1 - P channel
Length	L	1e-4	Length [m]
Length	W	1e-4	Width [m]
Area	AD	0	Area of the drain diffusion [m2]
Area	AS	0	Area of the source diffusion [m2]
Length	PD	0	Perimeter of the drain junction [m]
Length	PS	0	Perimeter of the source junction [m]
Real	NRD	1	Number of squares of the drain diffusions
Real	NRS	1	Number of squares of the source diffusions
Integer	OFF	0	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
Voltage	IC		Initial condition values, not implemented yet [V]
Temp_C	TEMP	27	Operating temperature of the device [degC]
ModelcardMOS	modelcard		MOSFET modelcard

Connectors

Type Name Description

PositivePin G gate node

PositivePin D drain node

NegativePin S source node

PositivePin B bulk node

Type	Name	Description
PositivePin	G	gate node
PositivePin	D	drain node
NegativePin	S	source node
PositivePin	B	bulk node

Modelica definition

model MOS "Metal-Oxide Semiconductor Field-Effect Transistor"

  Modelica.Electrical.Analog.Interfaces.PositivePin G "gate node";
  Modelica.Electrical.Analog.Interfaces.PositivePin D "drain node";
  Modelica.Electrical.Analog.Interfaces.NegativePin S "source node";
  Modelica.Electrical.Analog.Interfaces.PositivePin B "bulk node";

  parameter Integer mtype(start = 0) 
    "MOSFET type: 0 - N channel, 1 - P channel";
  parameter SI.Length L =  1e-4 "Length";
  parameter SI.Length W =  1e-4 "Width";
  parameter SI.Area AD = 0 "Area of the drain diffusion";
  parameter SI.Area AS = 0 "Area of the source diffusion";
  parameter SI.Length PD =  0 "Perimeter of the drain junction";
  parameter SI.Length PS =  0 "Perimeter of the source junction";
  parameter Real NRD = 1 "Number of squares of the drain diffusions";
  parameter Real NRS = 1 "Number of squares of the source diffusions";
  parameter Integer OFF = 0 
    "Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet";
  parameter SI.Voltage IC( start = -1e40) 
    "Initial condition values, not implemented yet";
  parameter SI.Temp_C TEMP = 27 "Operating temperature of the device";

  parameter ModelcardMOS modelcard "MOSFET modelcard";
  SpiceConstants C "General constants of SPICE simulator";
  final parameter Mos1.Mos1ModelLineParams p = Mos1.mos1RenameParameters(modelcard, C) 
    "Model line parameters";
  final parameter Mosfet.Mosfet m = Mos1.mos1RenameParametersDev(
    modelcard,
    mtype,
    W,
    L,
    AS,
    AS,
    PD,
    PS,
    NRD,
    NRS,
    OFF,
    IC,
    TEMP) "Renamed parameters";
  final parameter Integer m_type = if (m.m_bPMOS > 0.5) then -1 else 1 
    "Type of the transistor";
  final parameter Mos.MosModelLineVariables vp = Mos1.mos1ModelLineParamsInitEquations(
        p,
        C,
        m_type) "Model line variables";
  final parameter Mos1.Mos1Calc c1 = Mos.mosCalcInitEquations(
        p,
        C,
        vp,
        m) "Precalculated parameters";
  final parameter Mos1.Mos1Calc c2 = Mos.mosCalcCalcTempDependencies(
        p,
        C,
        vp,
        m,
        c1,
        m_type) "Precalculated parameters";

  Mos.CurrrentsCapacitances cc;

  constant Boolean m_bInit = false;

  Real Dinternal;  //internal drain node
  Real Sinternal;  //internal source node
  Real ird;
  Real irs;
  Real ibdgmin;
  Real ibsgmin;

  Real icBD;
  Real icBS;
  Real icGB;
  Real icGS;
  Real icGD;
  SI.Voltage vDS "Drain - source voltage";
  SI.Voltage vGS "Gate - source voltage";

equation 
  assert( NRD <> 0, "NRD, length of drain in squares, must not be zero");
  assert( NRS <> 0, "NRS, length of source in squares, must not be zero");

  vDS = D.v - S.v;
  vGS = G.v - S.v;

  cc = Mos.mosCalcNoBypassCode(
    m,
    m_type,
    c2,
    p,
    C,
    vp,
    m_bInit,
    {G.v, B.v, Dinternal, Sinternal});

  // drain- and sourceresistances
  // ----------------------------
  ird * c1.m_drainResistance = (D.v - Dinternal);
  irs * p.m_sourceResistance = (S.v - Sinternal);

  // capacitances
  // ------------

   icBD = cc.cBD * (der(B.v) - der(Dinternal));
   icBS = cc.cBS * (der(B.v) - der(Sinternal));
   icGB = cc.cGB * (der(G.v) - der(B.v));
   icGD = cc.cGD * (der(G.v) - der(Dinternal));
   icGS = cc.cGS * (der(G.v) - der(Sinternal));

  // currents
  // --------
   ibsgmin = SpiceConstants.CKTgmin * (B.v - Sinternal);
   ibdgmin = SpiceConstants.CKTgmin * (B.v - Dinternal);
  G.i = icGB + icGD + icGS;
  B.i = cc.iBD + cc.iBS + ibdgmin + ibsgmin - icGB + icBD + icBS;
  D.i = ird;
  S.i = irs;

//currentsum at inner node
//------------------------
  0    = -ird + cc.idrain - cc.iBD - ibdgmin - icGD - icBD;
  0    = -irs - cc.idrain - cc.iBS - ibsgmin - icGS - icBS;

end MOS;

Modelica.Electrical.Spice3.Internal.ModelcardMOS

Record with technological parameters (.model)

Information

Modelcard parameters for MOSFET model, both N and P channel, LEVEL 1: Shichman-Hodges

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Parameters

Type Name Default Description

Voltage VTO -1e40 Zero-bias threshold voltage, default 0 [V]

Transconductance KP -1e40 Transconductance parameter, default 2e-5 [A/V2]

Real GAMMA -1e40 Bulk threshold parameter, default 0

Voltage PHI -1e40 Surface potential, default 0.6 [V]

InversePotential LAMBDA 0 Channel-length modulation, default 0 [1/V]

Resistance RD -1e40 Drain ohmic resistance, default 0 [Ohm]

Resistance RS -1e40 Source ohmic resistance, default 0 [Ohm]

Capacitance CBD -1e40 Zero-bias B-D junction capacitance, default 0 [F]

Capacitance CBS -1e40 Zero-bias B-S junction capacitance, default 0 [F]

Current IS 1.e-14 Bulk junction saturation current [A]

Voltage PB 0.8 Bulk junction potential [V]

Permittivity CGSO 0.0 Gate-source overlap capacitance per meter channel width [F/m]

Permittivity CGDO 0.0 Gate-drain overlap capacitance per meter channel width [F/m]

Permittivity CGBO 0.0 Gate-bulk overlap capacitance per meter channel width [F/m]

Resistance RSH 0.0 Drain and source diffusion sheet resistance [Ohm]

CapacitancePerArea CJ 0.0 Zero-bias bulk junction bottom cap. per sq-meter of junction area [F/m2]

Real MJ 0.5 Bulk junction bottom grading coefficient

Permittivity CJSW 0.0 Zero-bias junction sidewall cap. per meter of junction perimeter [F/m]

Real MJSW 0.5 Bulk junction sidewall grading coefficient

CurrentDensity JS 0.0 Bulk junction saturation current per sq-meter of junction area [A/m2]

Length TOX -1e40 Oxide thickness, default 1e-7 [m]

Real NSUB -1e40 Substrate doping, default 0

PerArea_cm NSS 0.0 Surface state density [1/cm2]

Real TPG 1.0 Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate

Length LD 0.0 Lateral diffusion [m]

Area_cmPerVoltageSecond UO 600 Surface mobility [cm2/(V.s)]

Real KF 0 Flicker noise coefficient

Real AF 1.0 Flicker noise exponent

Real FC 0.5 Coefficient for forward-bias depletion capacitance formula

Temp_C TNOM -1e40 Parameter measurement temperature, default 27 [degC]

Type	Name	Default	Description
Voltage	VTO	-1e40	Zero-bias threshold voltage, default 0 [V]
Transconductance	KP	-1e40	Transconductance parameter, default 2e-5 [A/V2]
Real	GAMMA	-1e40	Bulk threshold parameter, default 0
Voltage	PHI	-1e40	Surface potential, default 0.6 [V]
InversePotential	LAMBDA	0	Channel-length modulation, default 0 [1/V]
Resistance	RD	-1e40	Drain ohmic resistance, default 0 [Ohm]
Resistance	RS	-1e40	Source ohmic resistance, default 0 [Ohm]
Capacitance	CBD	-1e40	Zero-bias B-D junction capacitance, default 0 [F]
Capacitance	CBS	-1e40	Zero-bias B-S junction capacitance, default 0 [F]
Current	IS	1.e-14	Bulk junction saturation current [A]
Voltage	PB	0.8	Bulk junction potential [V]
Permittivity	CGSO	0.0	Gate-source overlap capacitance per meter channel width [F/m]
Permittivity	CGDO	0.0	Gate-drain overlap capacitance per meter channel width [F/m]
Permittivity	CGBO	0.0	Gate-bulk overlap capacitance per meter channel width [F/m]
Resistance	RSH	0.0	Drain and source diffusion sheet resistance [Ohm]
CapacitancePerArea	CJ	0.0	Zero-bias bulk junction bottom cap. per sq-meter of junction area [F/m2]
Real	MJ	0.5	Bulk junction bottom grading coefficient
Permittivity	CJSW	0.0	Zero-bias junction sidewall cap. per meter of junction perimeter [F/m]
Real	MJSW	0.5	Bulk junction sidewall grading coefficient
CurrentDensity	JS	0.0	Bulk junction saturation current per sq-meter of junction area [A/m2]
Length	TOX	-1e40	Oxide thickness, default 1e-7 [m]
Real	NSUB	-1e40	Substrate doping, default 0
PerArea_cm	NSS	0.0	Surface state density [1/cm2]
Real	TPG	1.0	Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate
Length	LD	0.0	Lateral diffusion [m]
Area_cmPerVoltageSecond	UO	600	Surface mobility [cm2/(V.s)]
Real	KF	0	Flicker noise coefficient
Real	AF	1.0	Flicker noise exponent
Real	FC	0.5	Coefficient for forward-bias depletion capacitance formula
Temp_C	TNOM	-1e40	Parameter measurement temperature, default 27 [degC]

Modelica definition

record ModelcardMOS "Record with technological parameters (.model)"

  parameter SI.Voltage VTO=-1e40 "Zero-bias threshold voltage, default 0";
  parameter SI.Transconductance KP=-1e40 
    "Transconductance parameter, default 2e-5";
  parameter Real GAMMA=-1e40 "Bulk threshold parameter, default 0";
  parameter SI.Voltage PHI=-1e40 "Surface potential, default 0.6";
  parameter SI.InversePotential LAMBDA=0 "Channel-length modulation, default 0";
  parameter SI.Resistance RD=-1e40 "Drain ohmic resistance, default 0";
  parameter SI.Resistance RS=-1e40 "Source ohmic resistance, default 0";
  parameter SI.Capacitance CBD=-1e40 
    "Zero-bias B-D junction capacitance, default 0";
  parameter SI.Capacitance CBS=-1e40 
    "Zero-bias B-S junction capacitance, default 0";
  parameter SI.Current IS=1.e-14 "Bulk junction saturation current";
  parameter SI.Voltage PB=0.8 "Bulk junction potential";
  parameter SI.Permittivity CGSO=0.0 
    "Gate-source overlap capacitance per meter channel width";
  parameter SI.Permittivity CGDO=0.0 
    "Gate-drain overlap capacitance per meter channel width";
  parameter SI.Permittivity CGBO=0.0 
    "Gate-bulk overlap capacitance per meter channel width";
  parameter SI.Resistance RSH=0.0 "Drain and source diffusion sheet resistance";
  parameter SI.CapacitancePerArea CJ=0.0 
    "Zero-bias bulk junction bottom cap. per sq-meter of junction area";
  parameter Real MJ=0.5 "Bulk junction bottom grading coefficient";
  parameter SI.Permittivity CJSW=0.0 
    "Zero-bias junction sidewall cap. per meter of junction perimeter";
  parameter Real MJSW=0.5 "Bulk junction sidewall grading coefficient";
  parameter SI.CurrentDensity JS=0.0 
    "Bulk junction saturation current per sq-meter of junction area";
  parameter SI.Length TOX=-1e40 "Oxide thickness, default 1e-7";
  parameter Real NSUB=-1e40 "Substrate doping, default 0";
  parameter SI.Conversions.NonSIunits.PerArea_cm NSS=0.0 
    "Surface state density";
  parameter Real TPG=1.0 
    "Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate";
  parameter SI.Length LD=0.0 "Lateral diffusion";
  parameter SI.Conversions.NonSIunits.Area_cmPerVoltageSecond UO=600 
    "Surface mobility";
  parameter Real KF=0 "Flicker noise coefficient";
  parameter Real AF=1.0 "Flicker noise exponent";
  parameter Real FC=0.5 
    "Coefficient for forward-bias depletion capacitance formula";
  parameter SI.Temp_C TNOM=-1e40 
    "Parameter measurement temperature, default 27";
  constant Integer LEVEL=1 "Model level: Shichman-Hodges";
equation 

end ModelcardMOS;

Modelica.Electrical.Spice3.Internal.MOS2

Metal-Oxide Semiconductor Field-Effect Transistor

Modelica.Electrical.Spice3.Internal.MOS2

Information

MOSFET model, both N and P channel, LEVEL 2

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Parameters

Type Name Default Description

Integer mtype MOSFET type: 0 - N channel, 1 - P channel

Length L 1e-4 Length [m]

Length W 1e-4 Width [m]

Area AD 0 Area of the drain diffusion [m2]

Area AS 0 Area of the source diffusion [m2]

Length PD 0 Perimeter of the drain junction [m]

Length PS 0 Perimeter of the source junction [m]

Real NRD 1 Number of squares of the drain diffusions

Real NRS 1 Number of squares of the source diffusions

Integer OFF 0 Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet

Voltage IC Initial condition values, not implemented yet [V]

Real TEMP 27 Operating temperature of the device

ModelcardMOS2 modelcard MOSFET modelcard

SpiceConstants C General constants of SPICE simulator

Type	Name	Default	Description
Integer	mtype		MOSFET type: 0 - N channel, 1 - P channel
Length	L	1e-4	Length [m]
Length	W	1e-4	Width [m]
Area	AD	0	Area of the drain diffusion [m2]
Area	AS	0	Area of the source diffusion [m2]
Length	PD	0	Perimeter of the drain junction [m]
Length	PS	0	Perimeter of the source junction [m]
Real	NRD	1	Number of squares of the drain diffusions
Real	NRS	1	Number of squares of the source diffusions
Integer	OFF	0	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
Voltage	IC		Initial condition values, not implemented yet [V]
Real	TEMP	27	Operating temperature of the device
ModelcardMOS2	modelcard		MOSFET modelcard
SpiceConstants	C		General constants of SPICE simulator

Connectors

Type Name Description

PositivePin G gate node

PositivePin D drain node

NegativePin S source node

PositivePin B bulk node

Type	Name	Description
PositivePin	G	gate node
PositivePin	D	drain node
NegativePin	S	source node
PositivePin	B	bulk node

Modelica definition

model MOS2 "Metal-Oxide Semiconductor Field-Effect Transistor"

  Modelica.Electrical.Analog.Interfaces.PositivePin G "gate node";
  Modelica.Electrical.Analog.Interfaces.PositivePin D "drain node";
  Modelica.Electrical.Analog.Interfaces.NegativePin S "source node";
  Modelica.Electrical.Analog.Interfaces.PositivePin B "bulk node";

  parameter Integer mtype(start = 0) 
    "MOSFET type: 0 - N channel, 1 - P channel";
  parameter SI.Length L = 1e-4 "Length";
  parameter SI.Length W = 1e-4 "Width";
  parameter SI.Area AD = 0 "Area of the drain diffusion";
  parameter SI.Area AS = 0 "Area of the source diffusion";
  parameter SI.Length PD = 0 "Perimeter of the drain junction";
  parameter SI.Length PS = 0 "Perimeter of the source junction";
  parameter Real NRD = 1 "Number of squares of the drain diffusions";
  parameter Real NRS = 1 "Number of squares of the source diffusions";
  parameter Integer OFF = 0 
    "Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet";
  parameter SI.Voltage IC( start = -1e40) 
    "Initial condition values, not implemented yet";
  parameter Real TEMP = 27 "Operating temperature of the device";

  Real MOScapgd = qm.qm_capgd;
  Real MOScapgs = qm.qm_capgs;
  Real MOScapgb = qm.qm_capgb;

  parameter ModelcardMOS2 modelcard "MOSFET modelcard";
  constant SpiceConstants C "General constants of SPICE simulator";
  final parameter Mos2.Mos2ModelLineParams p=Mos2.mos2RenameParameters(
        modelcard, C) "Model line parameters";
  final parameter Mosfet.Mosfet m=Mos2.mos2RenameParametersDev(
          modelcard,
          mtype,
          W,
          L,
          AD,
          AS,
          PD,
          PS,
          NRD,
          NRS,
          OFF,
          IC,
          TEMP) "Renamed parameters";
  final parameter Integer m_type = if (m.m_bPMOS > 0.5) then -1 else 1 
    "Type of the transistor";
  final parameter Mos2.Mos2ModelLineVariables vp=
        Mos2.mos2ModelLineParamsInitEquations(
          p,
          C,
          m_type) "Model line variables";
  final parameter Mos2.Mos2Calc c1=Mos.mos2CalcInitEquations(
          p,
          C,
          vp,
          m) "Precalculated parameters";
  final parameter Mos2.Mos2Calc c2=Mos.mos2CalcCalcTempDependencies(
          p,
          C,
          vp,
          m,
          c1,
          m_type) "Precalculated parameters";
  Mos.DEVqmeyer qm;
  Mos.CurrrentsCapacitances cc;

  constant Boolean m_bInit = false;

  Real Dinternal;
  Real Sinternal;
  Real ird;
  Real irs;
  Real ibdgmin;
  Real ibsgmin;

  Real icBD;
  Real icBS;
  Real icGB;
  Real icGS;
  Real icGD;

  Real icqmGB;
  Real icqmGS;
  Real icqmGD;
  SI.Voltage vDS "Drain - source voltage";
  SI.Voltage vGS "Gate - source voltage";

equation 
  assert( NRD <> 0, "NRD, length of drain in squares, must not be zero");
  assert( NRS <> 0, "NRS, length of source in squares, must not be zero");

  vDS = D.v - S.v;
  vGS = G.v - S.v;

    (cc,qm) = Mos.mos2CalcNoBypassCode(
        m,
        m_type,
        c2,
        p,
        C,
        vp,
        m_bInit,
        {G.v,B.v,Dinternal,Sinternal});

  // drain- and sourceresistances
  // ----------------------------
  ird * c1.m_drainResistance  = (D.v - Dinternal);
  irs * p.m_sourceResistance =  (S.v - Sinternal);

  // capacitances
  // ------------

  icBD = cc.cBD * (der(B.v) - der(Dinternal));
  icBS = cc.cBS * (der(B.v) - der(Sinternal));
  icGB = cc.cGB * (der(G.v) - der(B.v));
  icGD = cc.cGD * (der(G.v) - der(Dinternal));
  icGS = cc.cGS * (der(G.v) - der(Sinternal));

  icqmGB = qm.qm_capgb*(der(G.v) - der(B.v));
  icqmGS = qm.qm_capgs*(der(G.v) - der(Sinternal));
  icqmGD = qm.qm_capgd*(der(G.v) - der(Dinternal));

  // currents
  // --------
    ibsgmin = SpiceConstants.CKTgmin*(B.v - Sinternal);
    ibdgmin = SpiceConstants.CKTgmin*(B.v - Dinternal);
  G.i =  icGB + icGD + icGS + icqmGB + icqmGD + icqmGS;
  B.i = cc.iBD + cc.iBS+ ibdgmin + ibsgmin -icGB + icBD + icBS - icqmGB;
  D.i = ird;
  S.i = irs;

//currentsum at inner node
//------------------------
  0    = -ird + cc.idrain - cc.iBD - ibdgmin - icGD - icBD  - icqmGD;
  0    = -irs - cc.idrain - cc.iBS - ibsgmin - icGS - icBS  - icqmGS;

end MOS2;

Modelica.Electrical.Spice3.Internal.ModelcardMOS2

Record with technological parameters (.model)

Information

Modelcard parameters for MOSFET model, both N and P channel, LEVEL 2

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from ModelcardMOS (Record with technological parameters (.model)).

Parameters

Type Name Default Description

Voltage VTO -1e40 Zero-bias threshold voltage, default 0 [V]

Transconductance KP -1e40 Transconductance parameter, default 2e-5 [A/V2]

Real GAMMA -1e40 Bulk threshold parameter, default 0

Voltage PHI -1e40 Surface potential, default 0.6 [V]

InversePotential LAMBDA 0 Channel-length modulation, default 0 [1/V]

Resistance RD -1e40 Drain ohmic resistance, default 0 [Ohm]

Resistance RS -1e40 Source ohmic resistance, default 0 [Ohm]

Capacitance CBD -1e40 Zero-bias B-D junction capacitance, default 0 [F]

Capacitance CBS -1e40 Zero-bias B-S junction capacitance, default 0 [F]

Current IS 1.e-14 Bulk junction saturation current [A]

Voltage PB 0.8 Bulk junction potential [V]

Permittivity CGSO 0.0 Gate-source overlap capacitance per meter channel width [F/m]

Permittivity CGDO 0.0 Gate-drain overlap capacitance per meter channel width [F/m]

Permittivity CGBO 0.0 Gate-bulk overlap capacitance per meter channel width [F/m]

Resistance RSH 0.0 Drain and source diffusion sheet resistance [Ohm]

CapacitancePerArea CJ 0.0 Zero-bias bulk junction bottom cap. per sq-meter of junction area [F/m2]

Real MJ 0.5 Bulk junction bottom grading coefficient

Permittivity CJSW 0.0 Zero-bias junction sidewall cap. per meter of junction perimeter [F/m]

Real MJSW 0.33 Bulk junction sidewall grading coefficient

CurrentDensity JS 0.0 Bulk junction saturation current per sq-meter of junction area [A/m2]

Length TOX -1e40 Oxide thickness, default 1e-7 [m]

Real NSUB -1e40 Substrate doping, default 0

PerArea_cm NSS 0.0 Surface state density [1/cm2]

Real TPG 1.0 Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate

Length LD 0.0 Lateral diffusion [m]

Area_cmPerVoltageSecond UO 600 Surface mobility [cm2/(V.s)]

Real KF 0 Flicker noise coefficient

Real AF 1.0 Flicker noise exponent

Real FC 0.5 Coefficient for forward-bias depletion capacitance formula

Temp_C TNOM -1e40 Parameter measurement temperature, default 27 [degC]

Real NFS 0.0 Fast surface state density

Real XJ 0.0 Metallurgiecal junction depth

Real UCRIT 1.e4 Critical field for mobility degradation (MOS2 only)

Real UEXP 0.0 Critical field exponent in mobility degradation (MOS2 only)

Real VMAX 0.0 Maximum drift velocity of carries

Real NEFF 1.0 Total channel charge (fixed and mobile) coefficient (MOS2 only)

Real DELTA 0.0 Width effect on theshold voltage

Type	Name	Default	Description
Voltage	VTO	-1e40	Zero-bias threshold voltage, default 0 [V]
Transconductance	KP	-1e40	Transconductance parameter, default 2e-5 [A/V2]
Real	GAMMA	-1e40	Bulk threshold parameter, default 0
Voltage	PHI	-1e40	Surface potential, default 0.6 [V]
InversePotential	LAMBDA	0	Channel-length modulation, default 0 [1/V]
Resistance	RD	-1e40	Drain ohmic resistance, default 0 [Ohm]
Resistance	RS	-1e40	Source ohmic resistance, default 0 [Ohm]
Capacitance	CBD	-1e40	Zero-bias B-D junction capacitance, default 0 [F]
Capacitance	CBS	-1e40	Zero-bias B-S junction capacitance, default 0 [F]
Current	IS	1.e-14	Bulk junction saturation current [A]
Voltage	PB	0.8	Bulk junction potential [V]
Permittivity	CGSO	0.0	Gate-source overlap capacitance per meter channel width [F/m]
Permittivity	CGDO	0.0	Gate-drain overlap capacitance per meter channel width [F/m]
Permittivity	CGBO	0.0	Gate-bulk overlap capacitance per meter channel width [F/m]
Resistance	RSH	0.0	Drain and source diffusion sheet resistance [Ohm]
CapacitancePerArea	CJ	0.0	Zero-bias bulk junction bottom cap. per sq-meter of junction area [F/m2]
Real	MJ	0.5	Bulk junction bottom grading coefficient
Permittivity	CJSW	0.0	Zero-bias junction sidewall cap. per meter of junction perimeter [F/m]
Real	MJSW	0.33	Bulk junction sidewall grading coefficient
CurrentDensity	JS	0.0	Bulk junction saturation current per sq-meter of junction area [A/m2]
Length	TOX	-1e40	Oxide thickness, default 1e-7 [m]
Real	NSUB	-1e40	Substrate doping, default 0
PerArea_cm	NSS	0.0	Surface state density [1/cm2]
Real	TPG	1.0	Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate
Length	LD	0.0	Lateral diffusion [m]
Area_cmPerVoltageSecond	UO	600	Surface mobility [cm2/(V.s)]
Real	KF	0	Flicker noise coefficient
Real	AF	1.0	Flicker noise exponent
Real	FC	0.5	Coefficient for forward-bias depletion capacitance formula
Temp_C	TNOM	-1e40	Parameter measurement temperature, default 27 [degC]
Real	NFS	0.0	Fast surface state density
Real	XJ	0.0	Metallurgiecal junction depth
Real	UCRIT	1.e4	Critical field for mobility degradation (MOS2 only)
Real	UEXP	0.0	Critical field exponent in mobility degradation (MOS2 only)
Real	VMAX	0.0	Maximum drift velocity of carries
Real	NEFF	1.0	Total channel charge (fixed and mobile) coefficient (MOS2 only)
Real	DELTA	0.0	Width effect on theshold voltage

Modelica definition

record ModelcardMOS2 "Record with technological parameters (.model)"
extends ModelcardMOS(MJSW=0.33);

  parameter Real NFS=0.0 "Fast surface state density";
  parameter Real XJ=0.0 "Metallurgiecal junction depth";
  parameter Real UCRIT=1.e4 
    "Critical field for mobility degradation (MOS2 only)";
  parameter Real UEXP=0.0 
    "Critical field exponent in mobility degradation (MOS2 only)";
  parameter Real VMAX=0.0 "Maximum drift velocity of carries";
  parameter Real NEFF=1.0 
    "Total channel charge (fixed and mobile) coefficient (MOS2 only)";
  parameter Real DELTA=0.0 "Width effect on theshold voltage";

end ModelcardMOS2;

Modelica.Electrical.Spice3.Internal.BJT

Bipolar junction transistor

Modelica.Electrical.Spice3.Internal.BJT

Information

Bibpolar junction transistor model

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Parameters

Type Name Default Description

Real TBJT Type of transistor (NPN=1, PNP=-1)

Real AREA 1.0 Area factor

Boolean OFF false Optional initial condition: false - IC not used, true - IC used, not implemented yet

Voltage IC_VCE Initial condition value (VBE, not implemented yet [V]

Voltage IC_VBE Initial condition value (VBC, not implemented yet [V]

Temp_C TEMP 27 Operating temperature of the device [degC]

Boolean SENS_AREA false Flag to request sensitivity WRT area, not implemented yet

ModelcardBJT modelcard BJT modelcard

SpiceConstants Con General constants of SPICE simulator

Type	Name	Default	Description
Real	TBJT		Type of transistor (NPN=1, PNP=-1)
Real	AREA	1.0	Area factor
Boolean	OFF	false	Optional initial condition: false - IC not used, true - IC used, not implemented yet
Voltage	IC_VCE		Initial condition value (VBE, not implemented yet [V]
Voltage	IC_VBE		Initial condition value (VBC, not implemented yet [V]
Temp_C	TEMP	27	Operating temperature of the device [degC]
Boolean	SENS_AREA	false	Flag to request sensitivity WRT area, not implemented yet
ModelcardBJT	modelcard		BJT modelcard
SpiceConstants	Con		General constants of SPICE simulator

Connectors

Type Name Description

PositivePin B Base node

PositivePin C Collector node

NegativePin E Emitter node

Type	Name	Description
PositivePin	B	Base node
PositivePin	C	Collector node
NegativePin	E	Emitter node

Modelica definition

model BJT "Bipolar junction transistor"

  Modelica.Electrical.Analog.Interfaces.PositivePin B "Base node";
  Modelica.Electrical.Analog.Interfaces.PositivePin C "Collector node";
  Modelica.Electrical.Analog.Interfaces.NegativePin E "Emitter node";

  parameter Real TBJT( start = 1) "Type of transistor (NPN=1, PNP=-1)";
  parameter Real AREA = 1.0 "Area factor";
  parameter Boolean OFF = false 
    "Optional initial condition: false - IC not used, true - IC used, not implemented yet";
  parameter SI.Voltage IC_VCE( start = -1e40) 
    "Initial condition value (VBE, not implemented yet";
  parameter SI.Voltage IC_VBE( start = -1e40) 
    "Initial condition value (VBC, not implemented yet";
  parameter SI.Temp_C TEMP = 27 "Operating temperature of the device";
  parameter Boolean SENS_AREA = false 
    "Flag to request sensitivity WRT area, not implemented yet";

  parameter ModelcardBJT modelcard "BJT modelcard";

  final parameter Bjt3.BjtModelLineParams p=Bjt3.bjtRenameParameters(modelcard,
      Con) "Model line parameters";
  constant SpiceConstants Con "General constants of SPICE simulator";
  final parameter Bjt3.Bjt p1=Bjt3.bjtRenameParametersDev(
          AREA,
          OFF,
          IC_VBE,
          IC_VCE,
          SENS_AREA) "Renamed parameters";
  final parameter Model.Model m=Bjt3.bjtRenameParametersDevTemp(TEMP) 
    "Renamed parameters";
  final parameter Bjt3.BjtModelLineParams p2=Bjt3.bjtRenameParametersType(TBJT);
  final parameter Bjt3.BjtModelLineVariables vl=
      Bjt3.bjtModelLineInitEquations(p) "Model line variables";
  final parameter Bjt3.Bjt3Calc c=Bjt3.bjt3CalcTempDependencies(
          p1,
          p,
          m,
          vl) "Precalculated parameters";
  final parameter Bjt3.BjtVariables v=Bjt3.bjtInitEquations(
          p1,
          p,
          vl) "Precalculated parameters";

  constant Boolean m_bInit = false;
  Bjt3.CurrentsCapacitances cc;
  Real Cinternal;    //inner collector node
  Real Binternal;    //inner base node
  Real Einternal;    //inner emitter node
  Real irc;
  Real ire;
  Real irb;
  Real ibcgmin;
  Real ibegmin;
  Real capbe;
  Real icapbe;
  Real capbc;
  Real icapbc;
  Real capbx;
  Real icapbx;
  SI.Voltage vBE "Base - emitter voltage";
  SI.Voltage vCE "Collector - emitter voltage";
  SI.Voltage vBC "Base - collector voltage";

equation 
  vBE = B.v - E.v;
  vCE = C.v - E.v;
  vBC = B.v - C.v;

   (cc,capbe,capbc,capbx) = Bjt3.bjtNoBypassCode(
         m,
         p1,
         p,
         c,
         v,
         vl,
         {C.v,B.v,E.v,Cinternal,Binternal,Einternal},
         m_bInit);

      //currents through capacitances
     icapbe = if (m_bInit) then 0.0 else capbe*(der(Binternal) - der(Einternal));
     icapbc = if (m_bInit) then 0.0 else capbc*(der(Binternal) - der(Cinternal));
     icapbx = if (m_bInit) then 0.0 else capbx*(der(B.v) - der(Cinternal));
     //Resistances
     irc * p.m_collectorResist = (C.v - Cinternal);
     ire * p.m_emitterResist = (E.v -Einternal);
     irb * p.m_baseResist = (B.v - Binternal);

    //currents
    ibcgmin = SpiceConstants.CKTgmin * (Binternal - Cinternal);
    ibegmin = SpiceConstants.CKTgmin * (Binternal - Einternal);
    C.i = irc;
    E.i = ire;
    B.i = irb + icapbx;
    //current sum at inner nodes
    0 =  ibcgmin + irc -cc.iCC + cc.iBCN + cc.iBC + icapbc + icapbx;  //current sum for inner node Cinternal
    0 =  ibegmin + ire + cc.iCC + cc.iBEN + cc.iBE + icapbe;          //current sum for inner node Einternal
    0 = - ibcgmin - ibegmin + irb - cc.iBC - cc.iBE - cc.iBCN - cc.iBEN -icapbc - icapbe; //current sum for inner node Binternal

end BJT;

Modelica.Electrical.Spice3.Internal.ModelcardBJT

Record with technological parameters (.model)

Information

Modelcard parameters for BJT model, both PNP and NPN

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Parameters

Type Name Default Description

Temp_C TNOM -1e40 Parameter measurement temperature, default 27 [degC]

Current IS 1e-16 Transport saturation current [A]

Real BF 100.00 Ideal maximum forward beta F

Real NF 1.0 Forward current emission coefficientF

Real NE 1.5 B-E leakage emission coefficient

Current ISE -1e40 B-E leakage saturation current, default = 0 [A]

Current ISC -1e40 B-C leakage saturation current, default = 0 [A]

Real BR 1.0 Ideal maximum reverse beta

Real NR 1.0 Reverse current emission coefficient

Real NC 2.0 B-C leakage emission coefficient

Voltage VAF 0.0 Forward Early voltage [V]

Current IKF 0.0 Forward beta roll-off corner current [A]

Voltage VAR 0.0 Reverse Early voltage [V]

Current IKR 0.0 Reverse beta roll-off corner current [A]

Resistance RE 0.0 Emitter resistance [Ohm]

Resistance RC 0.0 Collector resistance [Ohm]

Current IRB 0.0 Current for base resistance = (rb+rbm)/2 [A]

Resistance RB 0.0 Zero bias base resistance [Ohm]

Resistance RBM -1e40 Minimum base resistance, default = 0.0 [Ohm]

Capacitance CJE 0.0 Zero bias B-E depletion capacitance [F]

Voltage VJE 0.75 B-E built in potential [V]

Real MJE 0.33 B-E junction exponential faktor

Time TF 0.0 Ideal forward transit time [s]

Real XTF 0.0 Coefficient for bias dependence of TF

Current ITF 0.0 High current dependence of TF, [A]

Voltage VTF 0.0 Voltage giving VBC dependence of TF [V]

Temp_C PTF 0.0 Excess phase at freq=1/(TF*2*Pi) Hz [degC]

Capacitance CJC 0.0 Zero bias B-C depletion capacitance [F]

Voltage VJC 0.75 B-C built in potential [V]

Real MJC 0.33 B-C junction grading coefficient

Real XCJC 1.0 Fraction of B-C cap to internal base

Time TR 0.0 Ideal reverse transit time [s]

Capacitance CJS 0.0 Zero bias C-S capacitance [F]

Voltage VJS 0.75 Substrate junction built-in potential [V]

Real MJS 0.0 Substrate junction grading coefficient

Real XTB 0.0 Forward and reverse beta temperature exponent

GapEnergy EG 1.11 Energy gap for IS temperature effect on IS [eV]

Real XTI 3.0 Temperature exponent for IS

Real KF 0.0 Flicker Noise Coefficient

Real AF 1.0 Flicker Noise Exponent

Real FC 0.5 Forward bias junction fit parameter

Type	Name	Default	Description
Temp_C	TNOM	-1e40	Parameter measurement temperature, default 27 [degC]
Current	IS	1e-16	Transport saturation current [A]
Real	BF	100.00	Ideal maximum forward beta F
Real	NF	1.0	Forward current emission coefficientF
Real	NE	1.5	B-E leakage emission coefficient
Current	ISE	-1e40	B-E leakage saturation current, default = 0 [A]
Current	ISC	-1e40	B-C leakage saturation current, default = 0 [A]
Real	BR	1.0	Ideal maximum reverse beta
Real	NR	1.0	Reverse current emission coefficient
Real	NC	2.0	B-C leakage emission coefficient
Voltage	VAF	0.0	Forward Early voltage [V]
Current	IKF	0.0	Forward beta roll-off corner current [A]
Voltage	VAR	0.0	Reverse Early voltage [V]
Current	IKR	0.0	Reverse beta roll-off corner current [A]
Resistance	RE	0.0	Emitter resistance [Ohm]
Resistance	RC	0.0	Collector resistance [Ohm]
Current	IRB	0.0	Current for base resistance = (rb+rbm)/2 [A]
Resistance	RB	0.0	Zero bias base resistance [Ohm]
Resistance	RBM	-1e40	Minimum base resistance, default = 0.0 [Ohm]
Capacitance	CJE	0.0	Zero bias B-E depletion capacitance [F]
Voltage	VJE	0.75	B-E built in potential [V]
Real	MJE	0.33	B-E junction exponential faktor
Time	TF	0.0	Ideal forward transit time [s]
Real	XTF	0.0	Coefficient for bias dependence of TF
Current	ITF	0.0	High current dependence of TF, [A]
Voltage	VTF	0.0	Voltage giving VBC dependence of TF [V]
Temp_C	PTF	0.0	Excess phase at freq=1/(TF2Pi) Hz [degC]
Capacitance	CJC	0.0	Zero bias B-C depletion capacitance [F]
Voltage	VJC	0.75	B-C built in potential [V]
Real	MJC	0.33	B-C junction grading coefficient
Real	XCJC	1.0	Fraction of B-C cap to internal base
Time	TR	0.0	Ideal reverse transit time [s]
Capacitance	CJS	0.0	Zero bias C-S capacitance [F]
Voltage	VJS	0.75	Substrate junction built-in potential [V]
Real	MJS	0.0	Substrate junction grading coefficient
Real	XTB	0.0	Forward and reverse beta temperature exponent
GapEnergy	EG	1.11	Energy gap for IS temperature effect on IS [eV]
Real	XTI	3.0	Temperature exponent for IS
Real	KF	0.0	Flicker Noise Coefficient
Real	AF	1.0	Flicker Noise Exponent
Real	FC	0.5	Forward bias junction fit parameter

Modelica definition

record ModelcardBJT "Record with technological parameters (.model)"

  parameter SI.Temp_C TNOM = -1e40 
    "Parameter measurement temperature, default 27";
  parameter SI.Current IS = 1e-16 "Transport saturation current";
  parameter Real BF = 100.00 "Ideal maximum forward beta F";
  parameter Real NF = 1.0 "Forward current emission coefficientF";
  parameter Real NE = 1.5 "B-E leakage emission coefficient ";
  parameter SI.Current ISE = -1e40 
    "B-E leakage saturation current, default = 0";
  constant Real C2 =  -1e40 "Obsolete parameter name, default = 0";
  parameter SI.Current ISC = -1e40 
    "B-C leakage saturation current, default = 0";
  constant Real C4 =   -1e40 "Obsolete parameter name, default = 0";
  parameter Real BR = 1.0 "Ideal maximum reverse beta";
  parameter Real NR = 1.0 "Reverse current emission coefficient ";
  parameter Real NC = 2.0 "B-C leakage emission coefficient";
  parameter SI.Voltage VAF = 0.0 "Forward Early voltage";
  parameter SI.Current IKF = 0.0 "Forward beta roll-off corner current";
  parameter SI.Voltage VAR = 0.0 "Reverse Early voltage";
  parameter SI.Current IKR = 0.0 "Reverse beta roll-off corner current";
  parameter SI.Resistance RE = 0.0 "Emitter resistance";
  parameter SI.Resistance RC = 0.0 "Collector resistance";
  parameter SI.Current IRB = 0.0 "Current for base resistance = (rb+rbm)/2";
  parameter SI.Resistance RB = 0.0 "Zero bias base resistance";
  parameter SI.Resistance RBM = -1e40 "Minimum base resistance, default = 0.0";
  parameter SI.Capacitance CJE = 0.0 "Zero bias B-E depletion capacitance";
  parameter SI.Voltage VJE = 0.75 "B-E built in potential";
  parameter Real MJE = 0.33 "B-E junction exponential faktor";
  parameter SI.Time TF = 0.0 "Ideal forward transit time";
  parameter Real XTF = 0.0 "Coefficient for bias dependence of TF ";
  parameter SI.Current ITF = 0.0 "High current dependence of TF,";
  parameter SI.Voltage VTF = 0.0 "Voltage giving VBC dependence of TF";
  parameter SI.Temp_C PTF = 0.0 "Excess phase at freq=1/(TF*2*Pi) Hz";
  parameter SI.Capacitance CJC = 0.0 "Zero bias B-C depletion capacitance";
  parameter SI.Voltage VJC = 0.75 " B-C built in potential";
  parameter Real MJC = 0.33 "B-C junction grading coefficient";
  parameter Real XCJC = 1.0 "Fraction of B-C cap to internal base";
  parameter SI.Time TR = 0.0 "Ideal reverse transit time";
  parameter SI.Capacitance CJS = 0.0 "Zero bias C-S capacitance ";
  parameter SI.Voltage VJS = 0.75 "Substrate junction built-in potential ";
  parameter Real MJS = 0.0 "Substrate junction grading coefficient ";
  parameter Real XTB = 0.0 "Forward and reverse beta temperature exponent ";
  parameter SI.GapEnergy EG = 1.11 
    "Energy gap for IS temperature effect on IS ";
  parameter Real XTI = 3.0 "Temperature exponent for IS";
  parameter Real KF = 0.0 "Flicker Noise Coefficient ";
  parameter Real AF = 1.0 "Flicker Noise Exponent ";
  parameter Real FC = 0.5 "Forward bias junction fit parameter";

end ModelcardBJT;

Modelica.Electrical.Spice3.Internal.DIODE

Diode model

Modelica.Electrical.Spice3.Internal.DIODE

Information

DIODE model

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Electrical.Analog.Interfaces.TwoPin (Component with two electrical pins).

Parameters

Type Name Default Description

Real AREA 1 Area factor

Boolean OFF false Optional initial condition: false - IC not used, true - IC used, not implemented yet

Voltage IC Initial condition value (VD, not implemented yet [V]

Temp_C TEMP 27 Operating temperature of the device [degC]

Boolean SENS_AREA Flag to request sensitivity WRT area, not implemented yet

ModelcardDIODE modelcarddiode DIODE modelcard

Type	Name	Default	Description
Real	AREA	1	Area factor
Boolean	OFF	false	Optional initial condition: false - IC not used, true - IC used, not implemented yet
Voltage	IC		Initial condition value (VD, not implemented yet [V]
Temp_C	TEMP	27	Operating temperature of the device [degC]
Boolean	SENS_AREA		Flag to request sensitivity WRT area, not implemented yet
ModelcardDIODE	modelcarddiode		DIODE modelcard

Connectors

Type Name Description

PositivePin p Positive pin Positive pin (potential p.v > n.v for positive voltage drop v)

NegativePin n Negative pin

Type	Name	Description
PositivePin	p	Positive pin Positive pin (potential p.v > n.v for positive voltage drop v)
NegativePin	n	Negative pin

Modelica definition

model DIODE "Diode model"

  extends Modelica.Electrical.Analog.Interfaces.TwoPin;

  parameter Real AREA = 1 "Area factor";
  parameter Boolean OFF = false 
    "Optional initial condition: false - IC not used, true - IC used, not implemented yet";
  parameter SI.Voltage IC( start = -1e40) 
    "Initial condition value (VD, not implemented yet";
  parameter SI.Temp_C TEMP = 27 "Operating temperature of the device";
  parameter Boolean SENS_AREA( start = false) 
    "Flag to request sensitivity WRT area, not implemented yet";

  parameter ModelcardDIODE modelcarddiode "DIODE modelcard";
  SpiceConstants C "General constants of SPICE simulator";
  final parameter Diode.DiodeModelLineParams param=
       Diode.diodeRenameParameters(modelcarddiode, C) "Model line parameters";
  final parameter Diode.DiodeParams dp=Diode.diodeRenameParametersDev(
          TEMP,
          AREA,
          IC,
          OFF,
          SENS_AREA) "Renamed parameters";
  final parameter Model.Model m=Diode.diodeRenameParametersDevTemp(TEMP) 
    "Renamed parameters";
  final parameter Diode.DiodeVariables c1=Diode.diodeInitEquations(param) 
    "Precalculated values";
  final parameter Diode.DiodeCalc c2=Diode.diodeCalcTempDependencies(
          param,
          dp,
          m,
          c1) "Precalculated values";
  constant Boolean m_mbInit = false;

  Diode.CurrentsCapacitances cc;
  Real icap;
  Real m_dCap;
  Real pin;
  Real ir;
  Real igmin;

equation 
   (cc,m_dCap) = Diode.diodeNoBypassCode(
        param,
        dp,
        c2,
        m,
        m_mbInit,
        {pin,n.v});

  //current through capacitance
  icap = if (m_mbInit) then 0.0 else m_dCap*(der(pin)-der(n.v));
  //resistance
    ir*param.m_resist = (p.v - pin);

  //gmin
   igmin = SpiceConstants.CKTgmin*(pin - n.v);

  p.i =  ir;
  n.i =  -(cc.m_dCurrent +igmin) -icap;

//currentsum at inner node
  0 =  -ir + cc.m_dCurrent + igmin +icap;

end DIODE;

Modelica.Electrical.Spice3.Internal.ModelcardDIODE

Record with technological parameters (.model)

Information

Modelcard parameters for DIODE model

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Parameters

Type Name Default Description

Current IS 1e-14 Saturation Current [A]

Resistance RS 0.0 Ohmic resistance [Ohm]

Real N 1.0 Emission coefficient

Time TT 0.0 Transit time [s]

Capacitance CJO 0.0 Junction capacitance [F]

Voltage VJ 1.0 Junction Potential [V]

Real M 0.5 Grading coefficient

ActivationEnergy EG 1.11 Activation Energy [eV]

Real XTI 3.0 Saturation current temperature exponent

Real FC 0.5 Forward bias junction fit parameter

Voltage BV -1e40 Reverse breakdown voltage, default infinity [V]

Current IBV 1e-3 Current at reverse breakdown voltage [A]

Temp_C TNOM 27 Parameter measurement temperature [degC]

Real KF 0.0 Flicker noise coefficient

Real AF 1.0 Flicker noise exponent

Conductance G 0 Ohmic conductance [S]

Type	Name	Default	Description
Current	IS	1e-14	Saturation Current [A]
Resistance	RS	0.0	Ohmic resistance [Ohm]
Real	N	1.0	Emission coefficient
Time	TT	0.0	Transit time [s]
Capacitance	CJO	0.0	Junction capacitance [F]
Voltage	VJ	1.0	Junction Potential [V]
Real	M	0.5	Grading coefficient
ActivationEnergy	EG	1.11	Activation Energy [eV]
Real	XTI	3.0	Saturation current temperature exponent
Real	FC	0.5	Forward bias junction fit parameter
Voltage	BV	-1e40	Reverse breakdown voltage, default infinity [V]
Current	IBV	1e-3	Current at reverse breakdown voltage [A]
Temp_C	TNOM	27	Parameter measurement temperature [degC]
Real	KF	0.0	Flicker noise coefficient
Real	AF	1.0	Flicker noise exponent
Conductance	G	0	Ohmic conductance [S]

Modelica definition

record ModelcardDIODE "Record with technological parameters (.model)"
 parameter SI.Current IS=1e-14 "Saturation Current";
 parameter SI.Resistance RS=0.0 "Ohmic resistance";
 parameter Real N=1.0 "Emission coefficient";
 parameter SI.Time TT=0.0 "Transit time";
 parameter SI.Capacitance CJO=0.0 "Junction capacitance";
 parameter SI.Voltage VJ=1.0 "Junction Potential";
 parameter Real M=0.5 "Grading coefficient";
 parameter SI.ActivationEnergy EG=1.11 "Activation Energy";
 parameter Real XTI=3.0 "Saturation current temperature exponent";
 parameter Real FC=0.5 "Forward bias junction fit parameter";
 parameter SI.Voltage BV=-1e40 "Reverse breakdown voltage, default infinity";
 parameter SI.Current IBV=1e-3 "Current at reverse breakdown voltage";
 parameter SI.Temp_C TNOM=27 "Parameter measurement temperature";
 parameter Real KF=0.0 "Flicker noise coefficient";
 parameter Real AF=1.0 "Flicker noise exponent";
 parameter SI.Conductance G=0 "Ohmic conductance";
end ModelcardDIODE;

Modelica.Electrical.Spice3.Internal.R_SEMI

Semiconductor resistor

Modelica.Electrical.Spice3.Internal.R_SEMI

Information

Semiconductor resistance model

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Electrical.Analog.Interfaces.OnePort (Component with two electrical pins p and n and current i from p to n).

Parameters

Type Name Default Description

Resistance R -1e40 Resistance, if specified, geometrical information is overwritten [Ohm]

Temp_C TEMP -1e40 Temperature of resistor [degC]

Length L -1e40 Lenght of the resistor [m]

Length W -1e40 Width of the resistor, default DEFW (modelcard) [m]

Boolean SENS_AREA false Parameter for sensitivity analyses, not implemented yet

ModelcardR modelcard Resistor modelcard

Type	Name	Default	Description
Resistance	R	-1e40	Resistance, if specified, geometrical information is overwritten [Ohm]
Temp_C	TEMP	-1e40	Temperature of resistor [degC]
Length	L	-1e40	Lenght of the resistor [m]
Length	W	-1e40	Width of the resistor, default DEFW (modelcard) [m]
Boolean	SENS_AREA	false	Parameter for sensitivity analyses, not implemented yet
ModelcardR	modelcard		Resistor modelcard

Connectors

Type Name Description

PositivePin p Positive pin (potential p.v > n.v for positive voltage drop v)

NegativePin n Negative pin

Type	Name	Description
PositivePin	p	Positive pin (potential p.v > n.v for positive voltage drop v)
NegativePin	n	Negative pin

Modelica definition

model R_SEMI "Semiconductor resistor"

  extends Modelica.Electrical.Analog.Interfaces.OnePort;
  parameter SI.Resistance R= -1e40 
    "Resistance, if specified, geometrical information is overwritten";
  parameter SI.Temp_C TEMP = -1e40 "Temperature of resistor";
  parameter SI.Length L = -1e40 "Lenght of the resistor";
  parameter SI.Length W = -1e40 
    "Width of the resistor, default DEFW (modelcard)";
  parameter Boolean SENS_AREA= false 
    "Parameter for sensitivity analyses, not implemented yet";
  parameter ModelcardR modelcard "Resistor modelcard";
  SpiceConstants C "General constants of SPICE simulator";
  final parameter Rsemiconductor.ResistorModelLineParams lp=
      Rsemiconductor.resistorRenameParameters(modelcard, C) 
    "Model Line Parameters";
  final parameter Rsemiconductor.ResistorParams rp=
      Rsemiconductor.resistorRenameParametersDev(
          R,
          W,
          L,
          TEMP,
          SENS_AREA,
          C) "Renamed parameters";

    Rsemiconductor.ResistorVariables vp;

algorithm 
  vp := Rsemiconductor.resistorInitEquations(rp, lp);

  (vp.m_dConduct,vp.m_dCond_dTemp) :=
    Modelica.Electrical.Spice3.Internal.Functions.resDepTemp(
        vp.m_dResist,
        rp.m_dTemp,
        lp.m_dTnom,
        lp.m_dTC1,
        lp.m_dTC2);

 i :=vp.m_dConduct*v;

end R_SEMI;

Modelica.Electrical.Spice3.Internal.ModelcardR

Record with technological parameters (.model)

Information

Modelcard parameters for semiconductor resistance model

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Parameters

Type Name Default Description

FirstOrderTemperaturCoefficient TC1 0.0 First order temperature coefficient [Ohm/degC]

SecondOrderTemperaturCoefficient TC2 0.0 In Ohm/(deg C*deg C), Second2 order temperature coefficient [Ohm/degC2]

Resistance RSH -1e40 Sheet resistance [Ohm]

Temp_C TNOM -1e40 Parameter measurement temperature, default 27 [degC]

Length DEFW 1e-5 Default device width [m]

Length NARROW 0 Narrowing of resistor due to side etching [m]

Type	Name	Default	Description
FirstOrderTemperaturCoefficient	TC1	0.0	First order temperature coefficient [Ohm/degC]
SecondOrderTemperaturCoefficient	TC2	0.0	In Ohm/(deg C*deg C), Second2 order temperature coefficient [Ohm/degC2]
Resistance	RSH	-1e40	Sheet resistance [Ohm]
Temp_C	TNOM	-1e40	Parameter measurement temperature, default 27 [degC]
Length	DEFW	1e-5	Default device width [m]
Length	NARROW	0	Narrowing of resistor due to side etching [m]

Modelica definition

record ModelcardR "Record with technological parameters (.model)"
 parameter SI.Conversions.NonSIunits.FirstOrderTemperaturCoefficient TC1 =        0.0 
    "First order temperature coefficient";
 parameter SI.Conversions.NonSIunits.SecondOrderTemperaturCoefficient TC2 =               0.0 
    "In Ohm/(deg C*deg C), Second2 order temperature coefficient";
 parameter SI.Resistance RSH = -1e40 "Sheet resistance";
 parameter SI.Temp_C TNOM = -1e40 
    "Parameter measurement temperature, default 27";
 parameter SI.Length DEFW = 1e-5 "Default device width";
 parameter SI.Length NARROW = 0 "Narrowing of resistor due to side etching";
end ModelcardR;

Modelica.Electrical.Spice3.Internal.SpiceConstants

General constants of SPICE simulator

Information

General constants used by SPICE

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Modelica definition

record SpiceConstants "General constants of SPICE simulator"
  constant Real EPSSIL =     (11.7 * 8.854214871e-12);
  constant Real EPSOX =      3.453133e-11;
  constant SI.Charge CHARGE =     (1.6021918e-19);
  constant SI.Temp_K CONSTCtoK =  (273.15);
  constant SI.Temp_K REFTEMP =    300.15;  /* 27 deg C */

  constant Real CONSTroot2 =  sqrt(2.0);
  constant Real CONSTvt0(   final unit= "(J/K)/(A.s)") = Modelica.Constants.k * Modelica.SIunits.Conversions.from_degC(27)  / CHARGE; // deg C
  constant Real CONSTKoverQ(  final unit= "(J/K)/(A.s)")= Modelica.Constants.k / CHARGE;
  constant Real CONSTe =      exp(1.0);

  // options

  constant SI.Conductance CKTgmin =         1e-12;
  constant SI.Temp_K CKTnomTemp =      300.15;
  constant SI.Temp_K CKTtemp =         300.15;
  constant SI.Area CKTdefaultMosAD = 0.0;
  constant SI.Area CKTdefaultMosAS = 0.0;
  constant SI.Length CKTdefaultMosL =  100e-6;
  constant SI.Length CKTdefaultMosW =  100e-6;
  constant Real CKTreltol =       1e-10;
  constant Real CKTabstol =       1e-15;
  constant Real CKTvolttol =      1e-10;
  constant Real CKTtemptol =      1e-3;
end SpiceConstants;

Automatically generated Fri Nov 12 16:29:46 2010.