Modelica.Electrical.Spice3.Semiconductors

Information

This package contains both the semiconductor devices models of SPICE3, which are available, and their modelcards. The user should apply the models of this package.

All models of this package extend models of the package Repository, which contains the functions, parameters and data which are necessary to model the behaviour of the semiconductor devices.The modelcard records contain the SPICE3 technology parameters, which can be adjusted for more than one MOS simultaneously.

Package Content

Name	Description
M_PMOS	PMOS MOSFET device
M_NMOS	NMOS MOSFET device
ModelcardMOS	Record for the specification of modelcard parameters
M_NMOS2	NMOS MOSFET device
M_PMOS2	PMOS MOSFET device
ModelcardMOS2	Record for the specification of modelcard parameters
Q_NPNBJT	Bipolar junction transistor
Q_PNPBJT	Bipolar junction transistor
ModelcardBJT	Record for the specification of modelcard parameters
J_PJFJFET	P-channel Junction Field-Effect Transistor model (JFET)
J_NJFJFET	N-channel Junction Field-Effect Transistor model (JFET)
ModelcardJFET	Record for the specification of modelcard parameters for JFET
D_DIODE	Diode model
ModelcardDIODE	Record for the specification of modelcard parameters
R_Resistor	Semiconductor resistor from SPICE3
ModelcardRESISTOR	Record for the specification of modelcard parameters
C_Capacitor	Semiconductor capacitor
ModelcardCAPACITOR	Record for the specification of modelcard parameters for Semiconductor Capacitor

Modelica.Electrical.Spice3.Semiconductors.M_PMOS

Information

The model M_PMOS is a P channel MOSFET transistor with fixed level 1: Shichman-Hodges model

The models from the package Semiconductors accesses to the package Repository where all functions,

records and data are stored and modeled that are needed for the semiconductor models.

The package Semiconductors is for user access but not the package Repository.

Parameters

Name	Description
mtype	MOSFET type: 0 - N channel, 1 - P channel
L	Length [m]
W	Width [m]
AD	Area of the drain diffusion [m2]
AS	Area of the source diffusion [m2]
PD	Perimeter of the drain junction [m]
PS	Perimeter of the source junction [m]
NRD	Number of squares of the drain diffusions
NRS	Number of squares of the source diffusions
OFF	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
IC	Initial condition values, not implemented yet [V]
TEMP	Operating temperature of the device [degC]
modelcard	MOSFET modelcard
C	General constants of SPICE simulator

Connectors

Name	Description
G	gate node
D	drain node
S	source node
B	bulk node

Modelica.Electrical.Spice3.Semiconductors.M_NMOS

Information

The model M_NMOS is a N channel MOSFET transistor with fixed level 1: Shichman-Hodges model

The models from the package Semiconductors accesses to the package Repository where all functions,

records and data are stored and modeled that are needed for the semiconductor models.

The package Semiconductors is for user access but not the package Repository.

Parameters

Name	Description
mtype	MOSFET type: 0 - N channel, 1 - P channel
L	Length [m]
W	Width [m]
AD	Area of the drain diffusion [m2]
AS	Area of the source diffusion [m2]
PD	Perimeter of the drain junction [m]
PS	Perimeter of the source junction [m]
NRD	Number of squares of the drain diffusions
NRS	Number of squares of the source diffusions
OFF	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
IC	Initial condition values, not implemented yet [V]
TEMP	Operating temperature of the device [degC]
modelcard	MOSFET modelcard
C	General constants of SPICE simulator

Connectors

Name	Description
G	gate node
D	drain node
S	source node
B	bulk node

Modelica.Electrical.Spice3.Semiconductors.ModelcardMOS

Information

Technology model parameters of MOSFET transistor with fixed level 1: Shichman-Hodges model

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Parameters

Name	Description
VTO	Zero-bias threshold voltage, default 0 [V]
KP	Transconductance parameter, default 2e-5 [A/V2]
GAMMA	Bulk threshold parameter, default 0
PHI	Surface potential, default 0.6 [V]
LAMBDA	Channel-length modulation, default 0 [1/V]
RD	Drain ohmic resistance, default 0 [Ohm]
RS	Source ohmic resistance, default 0 [Ohm]
CBD	Zero-bias B-D junction capacitance, default 0 [F]
CBS	Zero-bias B-S junction capacitance, default 0 [F]
IS	Bulk junction saturation current [A]
PB	Bulk junction potential [V]
CGSO	Gate-source overlap capacitance per meter channel width [F/m]
CGDO	Gate-drain overlap capacitance per meter channel width [F/m]
CGBO	Gate-bulk overlap capacitance per meter channel width [F/m]
RSH	Drain and source diffusion sheet resistance [Ohm]
CJ	Zero-bias bulk junction bottom cap. per sq-meter of junction area [F/m2]
MJ	Bulk junction bottom grading coefficient
CJSW	Zero-bias junction sidewall cap. per meter of junction perimeter [F/m]
MJSW	Bulk junction sidewall grading coefficient
JS	Bulk junction saturation current per sq-meter of junction area [A/m2]
TOX	Oxide thickness, default 1e-7 [m]
NSUB	Substrate doping, default 0
NSS	Surface state density [1/cm2]
TPG	Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate
LD	Lateral diffusion [m]
UO	Surface mobility [cm2/(V.s)]
KF	Flicker noise coefficient
AF	Flicker noise exponent
FC	Coefficient for forward-bias depletion capacitance formula
TNOM	Parameter measurement temperature, default 27 [degC]

Modelica.Electrical.Spice3.Semiconductors.M_NMOS2

Information

The model M_NMOS is a N channel MOSFET transistor with fixed level 2:

The models from the package Semiconductors accesses to the package Internal where all functions,

records and data are stored and modeled that are needed for the semiconductor models.

The package Semiconductors is for user access but not the package Internal.

Parameters

Name	Description
mtype	MOSFET type: 0 - N channel, 1 - P channel
L	Length [m]
W	Width [m]
AD	Area of the drain diffusion [m2]
AS	Area of the source diffusion [m2]
PD	Perimeter of the drain junction [m]
PS	Perimeter of the source junction [m]
NRD	Number of squares of the drain diffusions
NRS	Number of squares of the source diffusions
OFF	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
IC_VDS	Initial condition value (VDS, not implemented yet) [V]
IC_VGS	Initial condition value (VGS, not implemented yet) [V]
IC_VBS	Initial condition value (VBS, not implemented yet) [V]
UIC	Use initial conditions: true, if initial condition is used
TEMP	Operating temperature of the device [degC]
modelcard	MOSFET modelcard
IC	Initial condition values, not implemented yet [V]
C	General constants of SPICE simulator

Connectors

Name	Description
G	gate node
D	drain node
S	source node
B	bulk node

Modelica.Electrical.Spice3.Semiconductors.M_PMOS2

Information

The model M_PMOS is a P channel MOSFET transistor with fixed level 2:

The models from the package Semiconductors accesses to the package Internal where all functions,

records and data are stored and modeled that are needed for the semiconductor models.

The package Semiconductors is for user access but not the package Internal.

Parameters

Name	Description
mtype	MOSFET type: 0 - N channel, 1 - P channel
L	Length [m]
W	Width [m]
AD	Area of the drain diffusion [m2]
AS	Area of the source diffusion [m2]
PD	Perimeter of the drain junction [m]
PS	Perimeter of the source junction [m]
NRD	Number of squares of the drain diffusions
NRS	Number of squares of the source diffusions
OFF	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
IC_VDS	Initial condition value (VDS, not implemented yet) [V]
IC_VGS	Initial condition value (VGS, not implemented yet) [V]
IC_VBS	Initial condition value (VBS, not implemented yet) [V]
UIC	Use initial conditions: true, if initial condition is used
TEMP	Operating temperature of the device [degC]
modelcard	MOSFET modelcard
IC	Initial condition values, not implemented yet [V]
C	General constants of SPICE simulator

Connectors

Name	Description
G	gate node
D	drain node
S	source node
B	bulk node

Modelica.Electrical.Spice3.Semiconductors.ModelcardMOS2

Information

Technology model parameters of MOSFET transistor with fixed level 1: Shichman-Hodges model

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Parameters

Name	Description
VTO	Zero-bias threshold voltage, default 0 [V]
KP	Transconductance parameter, default 2e-5 [A/V2]
GAMMA	Bulk threshold parameter, default 0
PHI	Surface potential, default 0.6 [V]
LAMBDA	Channel-length modulation, default 0 [1/V]
RD	Drain ohmic resistance, default 0 [Ohm]
RS	Source ohmic resistance, default 0 [Ohm]
CBD	Zero-bias B-D junction capacitance, default 0 [F]
CBS	Zero-bias B-S junction capacitance, default 0 [F]
IS	Bulk junction saturation current [A]
PB	Bulk junction potential [V]
CGSO	Gate-source overlap capacitance per meter channel width [F/m]
CGDO	Gate-drain overlap capacitance per meter channel width [F/m]
CGBO	Gate-bulk overlap capacitance per meter channel width [F/m]
RSH	Drain and source diffusion sheet resistance [Ohm]
CJ	Zero-bias bulk junction bottom cap. per sq-meter of junction area [F/m2]
MJ	Bulk junction bottom grading coefficient
CJSW	Zero-bias junction sidewall cap. per meter of junction perimeter [F/m]
MJSW	Bulk junction sidewall grading coefficient
JS	Bulk junction saturation current per sq-meter of junction area [A/m2]
TOX	Oxide thickness, default 1e-7 [m]
NSUB	Substrate doping, default 0
NSS	Surface state density [1/cm2]
TPG	Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate
LD	Lateral diffusion [m]
UO	Surface mobility [cm2/(V.s)]
KF	Flicker noise coefficient
AF	Flicker noise exponent
FC	Coefficient for forward-bias depletion capacitance formula
TNOM	Parameter measurement temperature, default 27 [degC]
NFS	Fast surface state density [1/cm2]
XJ	Metallurgical junction depth [m]
UCRIT	Critical field for mobility degradation (MOS2 only) [V/cm]
UEXP	Critical field exponent in mobility degradation (MOS2 only)
VMAX	Maximum drift velocity of carries [m/s]
NEFF	Total channel charge (fixed and mobile) coefficient (MOS2 only)
DELTA	Width effect on threshold voltage

Modelica.Electrical.Spice3.Semiconductors.Q_NPNBJT

Information

The model Q_NPNBJT is a NPN bipolar junction transistor model: Modified Gummel-Poon.

The models from the package Semiconductors accesses to the package Internal where all functions,

records and data are stored and modeled that are needed for the semiconductor models.

The package Semiconductors is for user access but not the package Internal.

Parameters

Name	Description
useSubstrateNode	=true, if SubstrateNode is enabled
TBJT	Type of transistor (NPN=1, PNP=-1)
AREA	Area factor
OFF	Optional initial condition: false - IC not used, true - IC used, not implemented yet
IC_VBE	Initial condition value (VBC, not implemented yet) [V]
IC_VCE	Initial condition value (VBE, not implemented yet) [V]
UIC	Use initial conditions: true, if initial condition is used
TEMP	Operating temperature of the device [degC]
SENS_AREA	Flag to request sensitivity WRT area, not implemented yet
modelcard	BJT modelcard

Connectors

Name	Description
B	Base node
C	Collector node
E	Emitter node
S

Modelica.Electrical.Spice3.Semiconductors.Q_PNPBJT

Information

The model Q_PNPBJT is a PNP bipolar junction transistor model: Modified Gummel-Poon.

The models from the package Semiconductors accesses to the package Internal where all functions,

records and data are stored and modeled that are needed for the semiconductor models.

The package Semiconductors is for user access but not the package Internal.

Parameters

Name	Description
useSubstrateNode	=true, if SubstrateNode is enabled
TBJT	Type of transistor (NPN=1, PNP=-1)
AREA	Area factor
OFF	Optional initial condition: false - IC not used, true - IC used, not implemented yet
IC_VBE	Initial condition value (VBC, not implemented yet) [V]
IC_VCE	Initial condition value (VBE, not implemented yet) [V]
UIC	Use initial conditions: true, if initial condition is used
TEMP	Operating temperature of the device [degC]
SENS_AREA	Flag to request sensitivity WRT area, not implemented yet
modelcard	BJT modelcard

Connectors

Name	Description
B	Base node
C	Collector node
E	Emitter node
S

Modelica.Electrical.Spice3.Semiconductors.ModelcardBJT

Information

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Technology parameters of the modified Gummel-Poon bipolar junction transistor model

Parameters

Name	Description
TNOM	Parameter measurement temperature [degC]
IS	Transport saturation current [A]
BF	Ideal maximum forward beta F
NF	Forward current emission coefficientF
NE	B-E leakage emission coefficient
ISE	B-E leakage saturation current, default = 0 [A]
ISC	B-C leakage saturation current, default = 0 [A]
BR	Ideal maximum reverse beta
NR	Reverse current emission coefficient
NC	B-C leakage emission coefficient
VAF	Forward Early voltage [V]
IKF	Forward beta roll-off corner current [A]
VAR	Reverse Early voltage [V]
IKR	Reverse beta roll-off corner current [A]
RE	Emitter resistance [Ohm]
RC	Collector resistance [Ohm]
IRB	Current for base resistance = (rb+rbm)/2 [A]
RB	Zero bias base resistance [Ohm]
RBM	Minimum base resistance, default = 0.0 [Ohm]
CJE	Zero bias B-E depletion capacitance [F]
VJE	B-E built in potential [V]
MJE	B-E junction exponential factor
TF	Ideal forward transit time [s]
XTF	Coefficient for bias dependence of TF
ITF	High current dependence of TF, [A]
VTF	Voltage giving VBC dependence of TF [V]
PTF	Excess phase at freq=1/(TF*2*Pi) Hz [Hz]
CJC	Zero bias B-C depletion capacitance [F]
VJC	B-C built in potential [V]
MJC	B-C junction grading coefficient
XCJC	Fraction of B-C cap to internal base
TR	Ideal reverse transit time [s]
CJS	Zero bias C-S capacitance [F]
VJS	Substrate junction built-in potential [V]
MJS	Substrate junction grading coefficient
XTB	Forward and reverse beta temperature exponent
EG	Energy gap for IS temperature effect on IS [eV]
XTI	Temperature exponent for IS
KF	Flicker Noise Coefficient
AF	Flicker Noise Exponent
FC	Forward bias junction fit parameter

Modelica.Electrical.Spice3.Semiconductors.J_PJFJFET

Information

J_PJFJFET is a P-channel junction field-effect transistor.

The junction field-effect transistor is derived from the FET model of Shichman and Hodges.

The models from the package Semiconductors accesses to the package Internal where all functions, records and data are stored and modeled that are needed for the semiconductor models. The package Semiconductors is for user access, but not the package Internal.

Parameters

Name	Description
mtype	JFET type: 0 - N channel, 1 - P channel
AREA	Number of parallel connected identical elements
OFF	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
IC_VDS	Initial condition value (VDS, not implemented yet) [V]
IC_VGS	Initial condition value (VGS, not implemented yet) [V]
UIC	Use initial conditions: true, if initial condition is used
TEMP	Operating temperature of the device [degC]
modelcard	JFET modelcard

Connectors

Name	Description
G	gate node
D	drain node
S	source node

Modelica.Electrical.Spice3.Semiconductors.J_NJFJFET

Information

J_NJFJFET is a N-channel junction field-effect transistor.

The junction field-effect transistor is derived from the FET model of Shichman and Hodges.

The models from the package Semiconductors accesses to the package Internal where all functions, records and data are stored and modeled that are needed for the semiconductor models. The package Semiconductors is for user access, but not the package Internal.

Parameters

Name	Description
mtype	JFET type: 0 - N channel, 1 - P channel
AREA	Number of parallel connected identical elements
OFF	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
IC_VDS	Initial condition value (VDS, not implemented yet) [V]
IC_VGS	Initial condition value (VGS, not implemented yet) [V]
UIC	Use initial conditions: true, if initial condition is used
TEMP	Operating temperature of the device [degC]
modelcard	JFET modelcard

Connectors

Name	Description
G	gate node
D	drain node
S	source node

Modelica.Electrical.Spice3.Semiconductors.ModelcardJFET

Information

Technology parameters of the junction field-effect transistor model.

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Parameters

Name	Description
CGS	Zero-bias G-S junction capacitance, default 0 [F]
CGD	Zero-bias G-D junction capacitance, default 0 [F]
IS	Saturation current of pn junctions [A]
FC	Coefficient for forward-bias depletion capacitance formula
RD	Drain ohmic resistance, default 0 [Ohm]
RS	Source ohmic resistance, default 0 [Ohm]
TNOM	Parameter measurement temperature [degC]
VTO	Zero-bias threshold voltage, default -2 [V]
B	Dotierungsverlauf parameter, default 1 [1/V]
BETA	Output admittance parameter, default 1e-4
LAMBDA	Channel-length modulation, default 0 [1/V]
PB	Junction potential of pn junctions [V]
AF	Flicker noise exponent
KF	Flicker noise coefficient

Modelica.Electrical.Spice3.Semiconductors.D_DIODE

Information

The model D_DIODE is a Junction diode model

The models from the package Semiconductors accesses to the package Repository where all functions,

records and data are stored and modeled that are needed for the semiconductor models.

The package Semiconductors is for user access but not the package Repository.

Parameters

Name	Description
AREA	Area factor
OFF	Optional initial condition: false - IC not used, true - IC used, not implemented yet
IC	Initial condition value (VD, not implemented yet [V]
TEMP	Operating temperature of the device [degC]
SENS_AREA	Flag to request sensitivity WRT area, not implemented yet
modelcarddiode	DIODE modelcard
C	General constants of SPICE simulator

Connectors

Name	Description
p	Positive pin Positive pin (potential p.v > n.v for positive voltage drop v)
n	Negative pin

Modelica.Electrical.Spice3.Semiconductors.ModelcardDIODE

Information

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Technology parameters of the junction diode model

Parameters

Name	Description
IS	Saturation Current [A]
RS	Ohmic resistance [Ohm]
N	Emission coefficient
TT	Transit time [s]
CJO	Junction capacitance [F]
VJ	Junction Potential [V]
M	Grading coefficient
EG	Activation Energy [eV]
XTI	Saturation current temperature exponent
FC	Forward bias junction fit parameter
BV	Reverse breakdown voltage, default infinity [V]
IBV	Current at reverse breakdown voltage [A]
TNOM	Parameter measurement temperature [degC]
KF	Flicker noise coefficient
AF	Flicker noise exponent
G	Ohmic conductance [S]

Modelica.Electrical.Spice3.Semiconductors.R_Resistor

Information

The model R_Resistor is a Semiconductor resistor model.

The models from the package Semiconductors accesses to the package Repository where all functions,

records and data are stored and modeled that are needed for the semiconductor models.

The package Semiconductors is for user access but not the package Repository.

Parameters

Name	Description
R	Resistance, if specified, geometrical information is overwritten [Ohm]
TEMP	Temperature of resistor [degC]
L	Lenght of the resistor [m]
W	Width of the resistor, default DEFW (modelcard) [m]
SENS_AREA	Parameter for sensitivity analyses, not implemented yet
modelcard	Resistor modelcard
C	General constants of SPICE simulator

Connectors

Name	Description
p	Positive pin (potential p.v > n.v for positive voltage drop v)
n	Negative pin

Modelica.Electrical.Spice3.Semiconductors.ModelcardRESISTOR

Information

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Technology parameters of the semiconductor resistor model

Parameters

Name	Description
TC1	First order temperature coefficient [Ohm/degC]
TC2	In Ohm/(deg C*deg C), Second2 order temperature coefficient [Ohm/degC2]
RSH	Sheet resistance [Ohm]
TNOM	Parameter measurement temperature, default 27 [degC]
DEFW	Default device width [m]
NARROW	Narrowing of resistor due to side etching [m]

Modelica.Electrical.Spice3.Semiconductors.C_Capacitor

Information

C_Capacitor is a Semiconductor Capacitor model.

This capacitor model allows the calculation of the actual capacitance value from strictly geometric information and the specification of the process.

The models from the package Semiconductors accesses to the package Repository where all functions, records and data are stored and modeled that are needed for the semiconductor models. The package Semiconductors is for user access, but not the package Repository.

Parameters

Name	Description
C	Capacitance, if specified, geometrical information is overwritten [F]
TEMP	Temperature of capacitor [degC]
L	Lenght of the capacitor [m]
W	Width of the capacitor, default DEFW (modelcard) [m]
SENS_AREA	Parameter for sensitivity analyses, not implemented yet
IC	Initial value [V]
UIC	Use initial conditions: true, if initial condition is used
modelcard	Capacitor modelcard

Connectors

Name	Description
p	Positive pin (potential p.v > n.v for positive voltage drop v)
n	Negative pin

Modelica.Electrical.Spice3.Semiconductors.ModelcardCAPACITOR

Information

Technology parameters of the semiconductor capacitor model.

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Parameters

Name	Description
CJ	Junction bottom capacitance F/meters2 [F/m2]
CJSW	Junction sidewall capacitance F/meters [F/m]
DEFW	Default device width [m]
NARROW	Narrowing due to side etching [m]