Modelica.Electrical.Spice3.Semiconductors

Information

This package contains both the semiconductor devices models of SPICE3, which are available, and their modelcards. The user should apply the models of this package.

All models of this package extend models of the package Repository, which contains the functions, parameters and data which are necessary to model the behaviour of the semiconductor devices.The modelcard records contain the SPICE3 technology parameters, which can be adjusted for more than one MOS simultaneously.

Extends from Modelica.Icons.Package (Icon for standard packages).

Package Content

Name	Description
M_PMOS	PMOS MOSFET device
M_NMOS	NMOS MOSFET device
ModelcardMOS	Record for the specification of modelcard parameters
Q_NPNBJT	Bipolar junction transistor
Q_PNPBJT	Bipolar junction transistor
ModelcardBJT	Record for the specification of modelcard parameters
D_DIODE	Diode model
ModelcardDIODE	Record for the specification of modelcard parameters
R_Resistor	Semiconductor resistor from SPICE3
ModelcardRESISTOR	Record for the specification of modelcard parameters

Modelica.Electrical.Spice3.Semiconductors.M_PMOS

Information

The model M_PMOS is a P channel MOSFET transistor with fixed level 1: Shichman-Hodges model

The models from the package Semiconductors accesses to the package Repository where all functions,

records and data are stored and modeled that are neede for the semiconductor models.

The package Semiconductors is for user access but not the package Repository.

Extends from Modelica.Electrical.Spice3.Internal.MOS (Metal-Oxide Semiconductor Field-Effect Transistor).

Parameters

Type	Name	Default	Description
Integer	mtype	1	MOSFET type: 0 - N channel, 1 - P channel
Length	L	1e-4	Length [m]
Length	W	1e-4	Width [m]
Area	AD	0	Area of the drain diffusion [m2]
Area	AS	0	Area of the source diffusion [m2]
Length	PD	0	Perimeter of the drain junction [m]
Length	PS	0	Perimeter of the source junction [m]
Real	NRD	1	Number of squares of the drain diffusions
Real	NRS	1	Number of squares of the source diffusions
Integer	OFF	0	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
Voltage	IC		Initial condition values, not implemented yet [V]
Temp_C	TEMP	27	Operating temperature of the device [degC]
ModelcardMOS	modelcard		MOSFET modelcard

Connectors

Type	Name	Description
PositivePin	G	gate node
PositivePin	D	drain node
NegativePin	S	source node
PositivePin	B	bulk node

Modelica definition

model M_PMOS "PMOS MOSFET device"
  extends Modelica.Electrical.Spice3.Internal.MOS(
                          final mtype=1);
equation 

end M_PMOS;

Modelica.Electrical.Spice3.Semiconductors.M_NMOS

Information

The model M_NMOS is a N channel MOSFET transistor with fixed level 1: Shichman-Hodges model

The models from the package Semiconductors accesses to the package Repository where all functions,

records and data are stored and modeled that are neede for the semiconductor models.

The package Semiconductors is for user access but not the package Repository.

Extends from Modelica.Electrical.Spice3.Internal.MOS (Metal-Oxide Semiconductor Field-Effect Transistor).

Parameters

Type	Name	Default	Description
Integer	mtype	0	MOSFET type: 0 - N channel, 1 - P channel
Length	L	1e-4	Length [m]
Length	W	1e-4	Width [m]
Area	AD	0	Area of the drain diffusion [m2]
Area	AS	0	Area of the source diffusion [m2]
Length	PD	0	Perimeter of the drain junction [m]
Length	PS	0	Perimeter of the source junction [m]
Real	NRD	1	Number of squares of the drain diffusions
Real	NRS	1	Number of squares of the source diffusions
Integer	OFF	0	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
Voltage	IC		Initial condition values, not implemented yet [V]
Temp_C	TEMP	27	Operating temperature of the device [degC]
ModelcardMOS	modelcard		MOSFET modelcard

Connectors

Type	Name	Description
PositivePin	G	gate node
PositivePin	D	drain node
NegativePin	S	source node
PositivePin	B	bulk node

Modelica definition

model M_NMOS "NMOS MOSFET device"
  extends Modelica.Electrical.Spice3.Internal.MOS(
                          final mtype=0);
equation 

end M_NMOS;

Modelica.Electrical.Spice3.Semiconductors.ModelcardMOS

Information

Technology model parameters of MOSFET transistor with fixed level 1: Shichman-Hodges model

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Extends from Modelica.Electrical.Spice3.Internal.ModelcardMOS (Record with technological parameters (.model)).

Parameters

Type	Name	Default	Description
Voltage	VTO	-1e40	Zero-bias threshold voltage, default 0 [V]
Transconductance	KP	-1e40	Transconductance parameter, default 2e-5 [A/V2]
Real	GAMMA	-1e40	Bulk threshold parameter, default 0
Voltage	PHI	-1e40	Surface potential, default 0.6 [V]
InversePotential	LAMBDA	0	Channel-length modulation, default 0 [1/V]
Resistance	RD	-1e40	Drain ohmic resistance, default 0 [Ohm]
Resistance	RS	-1e40	Source ohmic resistance, default 0 [Ohm]
Capacitance	CBD	-1e40	Zero-bias B-D junction capacitance, default 0 [F]
Capacitance	CBS	-1e40	Zero-bias B-S junction capacitance, default 0 [F]
Current	IS	1.e-14	Bulk junction saturation current [A]
Voltage	PB	0.8	Bulk junction potential [V]
Permittivity	CGSO	0.0	Gate-source overlap capacitance per meter channel width [F/m]
Permittivity	CGDO	0.0	Gate-drain overlap capacitance per meter channel width [F/m]
Permittivity	CGBO	0.0	Gate-bulk overlap capacitance per meter channel width [F/m]
Resistance	RSH	0.0	Drain and source diffusion sheet resistance [Ohm]
CapacitancePerArea	CJ	0.0	Zero-bias bulk junction bottom cap. per sq-meter of junction area [F/m2]
Real	MJ	0.5	Bulk junction bottom grading coefficient
Permittivity	CJSW	0.0	Zero-bias junction sidewall cap. per meter of junction perimeter [F/m]
Real	MJSW	0.5	Bulk junction sidewall grading coefficient
CurrentDensity	JS	0.0	Bulk junction saturation current per sq-meter of junction area [A/m2]
Length	TOX	-1e40	Oxide thickness, default 1e-7 [m]
Real	NSUB	-1e40	Substrate doping, default 0
PerArea_cm	NSS	0.0	Surface state density [1/cm2]
Real	TPG	1.0	Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate
Length	LD	0.0	Lateral diffusion [m]
Area_cmPerVoltageSecond	UO	600	Surface mobility [cm2/(V.s)]
Real	KF	0	Flicker noise coefficient
Real	AF	1.0	Flicker noise exponent
Real	FC	0.5	Coefficient for forward-bias depletion capacitance formula
Temp_C	TNOM	-1e40	Parameter measurement temperature, default 27 [degC]

Modelica definition

record ModelcardMOS 
  "Record for the specification of modelcard parameters"
  extends Modelica.Electrical.Spice3.Internal.ModelcardMOS;
end ModelcardMOS;

Modelica.Electrical.Spice3.Semiconductors.Q_NPNBJT

Information

The model Q_NPNBJT is a NPN bipolar junction transistor model: Modified Gummel-Poon.

The models from the package Semiconductors accesses to the package Repository where all functions,

records and data are stored and modeled that are neede for the semiconductor models.

The package Semiconductors is for user access but not the package Repository.

Extends from Modelica.Electrical.Spice3.Internal.BJT (Bipolar junction transistor).

Parameters

Type	Name	Default	Description
Real	TBJT	1	Type of transistor (NPN=1, PNP=-1)
Real	AREA	1.0	Area factor
Boolean	OFF	false	Optional initial condition: false - IC not used, true - IC used, not implemented yet
Voltage	IC_VCE		Initial condition value (VBE, not implemented yet [V]
Voltage	IC_VBE		Initial condition value (VBC, not implemented yet [V]
Temp_C	TEMP	27	Operating temperature of the device [degC]
Boolean	SENS_AREA	false	Flag to request sensitivity WRT area, not implemented yet
ModelcardBJT	modelcard		BJT modelcard
SpiceConstants	Con		General constants of SPICE simulator

Connectors

Type	Name	Description
PositivePin	B	Base node
PositivePin	C	Collector node
NegativePin	E	Emitter node

Modelica definition

model Q_NPNBJT "Bipolar junction transistor"
 extends Modelica.Electrical.Spice3.Internal.BJT(
                        final TBJT=1);


end Q_NPNBJT;

Modelica.Electrical.Spice3.Semiconductors.Q_PNPBJT

Information

The model Q_PNPBJT is a PNP bipolar junction transistor model: Modified Gummel-Poon.

The models from the package Semiconductors accesses to the package Repository where all functions,

records and data are stored and modeled that are neede for the semiconductor models.

The package Semiconductors is for user access but not the package Repository.

Extends from Modelica.Electrical.Spice3.Internal.BJT (Bipolar junction transistor).

Parameters

Type	Name	Default	Description
Real	TBJT	-1	Type of transistor (NPN=1, PNP=-1)
Real	AREA	1.0	Area factor
Boolean	OFF	false	Optional initial condition: false - IC not used, true - IC used, not implemented yet
Voltage	IC_VCE		Initial condition value (VBE, not implemented yet [V]
Voltage	IC_VBE		Initial condition value (VBC, not implemented yet [V]
Temp_C	TEMP	27	Operating temperature of the device [degC]
Boolean	SENS_AREA	false	Flag to request sensitivity WRT area, not implemented yet
ModelcardBJT	modelcard		BJT modelcard
SpiceConstants	Con		General constants of SPICE simulator

Connectors

Type	Name	Description
PositivePin	B	Base node
PositivePin	C	Collector node
NegativePin	E	Emitter node

Modelica definition

model Q_PNPBJT "Bipolar junction transistor"
 extends Modelica.Electrical.Spice3.Internal.BJT(
                        final TBJT=-1);


end Q_PNPBJT;

Modelica.Electrical.Spice3.Semiconductors.ModelcardBJT

Information

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Technology parameters of the modified Gummel-Poon bipolar junction transistor model

Extends from Modelica.Electrical.Spice3.Internal.ModelcardBJT (Record with technological parameters (.model)).

Parameters

Type	Name	Default	Description
Temp_C	TNOM	-1e40	Parameter measurement temperature, default 27 [degC]
Current	IS	1e-16	Transport saturation current [A]
Real	BF	100.00	Ideal maximum forward beta F
Real	NF	1.0	Forward current emission coefficientF
Real	NE	1.5	B-E leakage emission coefficient
Current	ISE	-1e40	B-E leakage saturation current, default = 0 [A]
Current	ISC	-1e40	B-C leakage saturation current, default = 0 [A]
Real	BR	1.0	Ideal maximum reverse beta
Real	NR	1.0	Reverse current emission coefficient
Real	NC	2.0	B-C leakage emission coefficient
Voltage	VAF	0.0	Forward Early voltage [V]
Current	IKF	0.0	Forward beta roll-off corner current [A]
Voltage	VAR	0.0	Reverse Early voltage [V]
Current	IKR	0.0	Reverse beta roll-off corner current [A]
Resistance	RE	0.0	Emitter resistance [Ohm]
Resistance	RC	0.0	Collector resistance [Ohm]
Current	IRB	0.0	Current for base resistance = (rb+rbm)/2 [A]
Resistance	RB	0.0	Zero bias base resistance [Ohm]
Resistance	RBM	-1e40	Minimum base resistance, default = 0.0 [Ohm]
Capacitance	CJE	0.0	Zero bias B-E depletion capacitance [F]
Voltage	VJE	0.75	B-E built in potential [V]
Real	MJE	0.33	B-E junction exponential faktor
Time	TF	0.0	Ideal forward transit time [s]
Real	XTF	0.0	Coefficient for bias dependence of TF
Current	ITF	0.0	High current dependence of TF, [A]
Voltage	VTF	0.0	Voltage giving VBC dependence of TF [V]
Temp_C	PTF	0.0	Excess phase at freq=1/(TF*2*Pi) Hz [degC]
Capacitance	CJC	0.0	Zero bias B-C depletion capacitance [F]
Voltage	VJC	0.75	B-C built in potential [V]
Real	MJC	0.33	B-C junction grading coefficient
Real	XCJC	1.0	Fraction of B-C cap to internal base
Time	TR	0.0	Ideal reverse transit time [s]
Capacitance	CJS	0.0	Zero bias C-S capacitance [F]
Voltage	VJS	0.75	Substrate junction built-in potential [V]
Real	MJS	0.0	Substrate junction grading coefficient
Real	XTB	0.0	Forward and reverse beta temperature exponent
GapEnergy	EG	1.11	Energy gap for IS temperature effect on IS [eV]
Real	XTI	3.0	Temperature exponent for IS
Real	KF	0.0	Flicker Noise Coefficient
Real	AF	1.0	Flicker Noise Exponent
Real	FC	0.5	Forward bias junction fit parameter

Modelica definition

record ModelcardBJT 
  "Record for the specification of modelcard parameters"
  extends Modelica.Electrical.Spice3.Internal.ModelcardBJT;
end ModelcardBJT;

Modelica.Electrical.Spice3.Semiconductors.D_DIODE

Information

The model D_DIODE is a Junction diode model

The models from the package Semiconductors accesses to the package Repository where all functions,

records and data are stored and modeled that are neede for the semiconductor models.

The package Semiconductors is for user access but not the package Repository.

Extends from Modelica.Electrical.Spice3.Internal.DIODE (Diode model).

Parameters

Type	Name	Default	Description
Real	AREA	1	Area factor
Boolean	OFF	false	Optional initial condition: false - IC not used, true - IC used, not implemented yet
Voltage	IC		Initial condition value (VD, not implemented yet [V]
Temp_C	TEMP	27	Operating temperature of the device [degC]
Boolean	SENS_AREA		Flag to request sensitivity WRT area, not implemented yet
ModelcardDIODE	modelcarddiode		DIODE modelcard

Connectors

Type	Name	Description
PositivePin	p	Positive pin Positive pin (potential p.v > n.v for positive voltage drop v)
NegativePin	n	Negative pin

Modelica definition

model D_DIODE "Diode model"
  extends Modelica.Electrical.Spice3.Internal.DIODE;


end D_DIODE;

Modelica.Electrical.Spice3.Semiconductors.ModelcardDIODE

Information

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Technology parameters of the junction diode model

Extends from Modelica.Electrical.Spice3.Internal.ModelcardDIODE (Record with technological parameters (.model)).

Parameters

Type	Name	Default	Description
Current	IS	1e-14	Saturation Current [A]
Resistance	RS	0.0	Ohmic resistance [Ohm]
Real	N	1.0	Emission coefficient
Time	TT	0.0	Transit time [s]
Capacitance	CJO	0.0	Junction capacitance [F]
Voltage	VJ	1.0	Junction Potential [V]
Real	M	0.5	Grading coefficient
ActivationEnergy	EG	1.11	Activation Energy [eV]
Real	XTI	3.0	Saturation current temperature exponent
Real	FC	0.5	Forward bias junction fit parameter
Voltage	BV	-1e40	Reverse breakdown voltage, default infinity [V]
Current	IBV	1e-3	Current at reverse breakdown voltage [A]
Temp_C	TNOM	27	Parameter measurement temperature [degC]
Real	KF	0.0	Flicker noise coefficient
Real	AF	1.0	Flicker noise exponent
Conductance	G	0	Ohmic conductance [S]

Modelica definition

record ModelcardDIODE 
  "Record for the specification of modelcard parameters"
  extends Modelica.Electrical.Spice3.Internal.ModelcardDIODE;
end ModelcardDIODE;

Modelica.Electrical.Spice3.Semiconductors.R_Resistor

Information

The model R_Resistor is a Semiconductor resistor model.

The models from the package Semiconductors accesses to the package Repository where all functions,

records and data are stored and modeled that are neede for the semiconductor models.

The package Semiconductors is for user access but not the package Repository.

Extends from Modelica.Electrical.Spice3.Internal.R_SEMI (Semiconductor resistor).

Parameters

Type	Name	Default	Description
Resistance	R	-1e40	Resistance, if specified, geometrical information is overwritten [Ohm]
Temp_C	TEMP	-1e40	Temperature of resistor [degC]
Length	L	-1e40	Lenght of the resistor [m]
Length	W	-1e40	Width of the resistor, default DEFW (modelcard) [m]
Boolean	SENS_AREA	false	Parameter for sensitivity analyses, not implemented yet
ModelcardR	modelcard		Resistor modelcard

Connectors

Type	Name	Description
PositivePin	p	Positive pin (potential p.v > n.v for positive voltage drop v)
NegativePin	n	Negative pin

Modelica definition

model R_Resistor "Semiconductor resistor from SPICE3"
extends Modelica.Electrical.Spice3.Internal.R_SEMI;
end R_Resistor;

Modelica.Electrical.Spice3.Semiconductors.ModelcardRESISTOR

Information

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Technology parameters of the semiconductor resistor model

Extends from Modelica.Electrical.Spice3.Internal.ModelcardR (Record with technological parameters (.model)).

Parameters

Type	Name	Default	Description
FirstOrderTemperaturCoefficient	TC1	0.0	First order temperature coefficient [Ohm/degC]
SecondOrderTemperaturCoefficient	TC2	0.0	In Ohm/(deg C*deg C), Second2 order temperature coefficient [Ohm/degC2]
Resistance	RSH	-1e40	Sheet resistance [Ohm]
Temp_C	TNOM	-1e40	Parameter measurement temperature, default 27 [degC]
Length	DEFW	1e-5	Default device width [m]
Length	NARROW	0	Narrowing of resistor due to side etching [m]

Modelica definition

record ModelcardRESISTOR 
  "Record for the specification of modelcard parameters"
  extends Modelica.Electrical.Spice3.Internal.ModelcardR;
end ModelcardRESISTOR;